Features
? Single 2.7V - 3.6V Supply
? Serial-interface Architecture
? Page Program Operation
– Single Cycle Reprogram (Erase and Program)
– 8192 Pages (528 Bytes/Page) Main Memory
?
?
?
Optional Page and Block Erase Operations
Two 528-byte SRAM Data Buffers – Allows Receiving of Data while Reprogramming of
Nonvolatile Memory
Internal Program and Control Timer
?
?
?
?
?
?
?
?
Fast Page Program Time – 7 ms Typical
120 μs Typical Page to Buffer Transfer Time
Low-power Dissipation
– 4 mA Active Read Current Typical
– 3 μA CMOS Standby Current Typical
13 MHz Max Clock Frequency
Hardware Data Protection Feature
Serial Peripheral Interface (SPI) Compatible – Modes 0 and 3
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
32-megabit
2.7-volt Only
Serial
DataFlash ?
Description
The AT45DB321 is a 2.7-volt only, serial-interface Flash memory suitable for in-sys-
tem reprogramming. Its 34,603,008 bits of memory are organized as 8192 pages of
528 bytes each. In addition to the main memory, the AT45DB321 also contains two
SRAM data buffers of 528 bytes each. The buffers allow receiving of data while a
page in the main memory is being reprogrammed. Unlike conventional Flash memo-
(continued)
AT45DB321
Recommend using
AT45DB321B for new
designs.
Pin Configurations
CBGA Top View Through Package
Pin Name
CS
Function
Chip Select
A
1
2
NC
3
NC
4
NC
5
NC
B
SCK
Serial Clock
C
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
SI
Serial Input
D
NC
SCK GND VCC
NC
SO
WP
RESET
Serial Output
Hardware Page
Write Protect Pin
Chip Reset
E
F
G
H
J
NC
NC
NC
NC
CS RDY/BSY WP NC
SO SI RESET NC
NC NC NC NC
NC NC NC NC
AT45DB321
Preliminary 16-
RDY/BUSY
Ready/Busy
NC NC NC NC NC
TSOP Top View
Type 1
Megabit 2.7-volt
Only Serial
RDY/BUSY
RESET
WP
NC
NC
NC
VCC
GND
NC
NC
NC
NC
CS
SCK
SI
SO
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
DataFlash
Rev. 1121E–01/01
1
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相关代理商/技术参数
AT45DB321-TI 功能描述:闪存 32M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AT45DB641E-CCUN2B-T 功能描述:DATAFLASH 64MBIT BINARY 9UBGA 制造商:adesto technologies 系列:- 包装:带卷(TR) 零件状态:有效 格式 - 存储器:闪存 存储器类型:DataFLASH 存储容量:64M(32K 页 x 256 字节) 速度:85MHz 接口:SPI,RapidS 电压 - 电源:1.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C(TC) 封装/外壳:9-UBGA 供应商器件封装:9-UBGA(6x6) 标准包装:4,000
AT45DB641E-CCUN-T 制造商:Adesto Technologies Corporation 功能描述:9 BALL UBGA 3X3 1.0 MM PITCH, IND TEMP, 1.7V, T&R - Tape and Reel
AT45DB641E-DWF 制造商:Adesto Technologies Corporation 功能描述:DIE IN WAFER FORM - Gel-pak, waffle pack, wafer, diced wafer on film
AT45DB641E-MHN2B-T 功能描述:DATAFLASH 64MBIT 8UDFN 制造商:adesto technologies 系列:- 包装:剪切带(CT) 零件状态:有效 格式 - 存储器:闪存 存储器类型:DataFLASH 存储容量:64M(32K 页 x 256 字节) 速度:85MHz 接口:SPI,RapidS 电压 - 电源:1.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C(TC) 封装/外壳:8-UDFN 裸露焊盘 供应商器件封装:8-UDFN(5x6) 标准包装:1
AT45DB641E-MHN-T 制造商:Adesto Technologies Corporation 功能描述:8-UDFN (5X6X0.6), IND TEMP, 1.7V, T&R - Tape and Reel 制造商:Adesto Technologies Corporation 功能描述:DATAFLASH 64MBIT 8UDFN 5X6
AT45DB641E-MHN-Y 制造商:Adesto Technologies Corporation 功能描述:8-UDFN (5X6X0.6), IND TEMP, 1.7V, TRAY - Trays
AT45DB641E-MWHN2B-T 功能描述:DATAFLASH 64MBIT 8VDFN 制造商:adesto technologies 系列:- 包装:剪切带(CT) 零件状态:有效 格式 - 存储器:闪存 存储器类型:DataFLASH 存储容量:64M(32K 页 x 256 字节) 速度:85MHz 接口:SPI,RapidS 电压 - 电源:1.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C(TC) 封装/外壳:8-VDFN 裸露焊盘 供应商器件封装:8-VDFN(6x8) 标准包装:1